ESH3B-M3/9AT Pricing (USD) [374354pcs Stock]
- 1 pcs$0.09880
- 7,000 pcs$0.08954
- Part Number:
- ESH3B-M3/9AT
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Detailed description:
- DIODE GEN PURP 100V 3A DO214AB. Rectifiers 3A,100V,25NS,UF Rect, SMD
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - TRIACs, Transistors - FETs, MOSFETs - RF, Thyristors - SCRs - Modules and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in Vishay Semiconductor Diodes Division ESH3B-M3/9AT electronic components. ESH3B-M3/9AT can be shipped within 24 hours after order. If you have any demands for ESH3B-M3/9AT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ESH3B-M3/9AT Product Attributes
Part Number :
ESH3B-M3/9AT
Manufacturer :
Vishay Semiconductor Diodes Division
Description :
DIODE GEN PURP 100V 3A DO214AB
Series :
-
Part Status :
Active
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
100V
Current - Average Rectified (Io) :
3A
Voltage - Forward (Vf) (Max) @ If :
900mV @ 3A
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
40ns
Current - Reverse Leakage @ Vr :
5µA @ 100V
Capacitance @ Vr, F :
70pF @ 4V, 1MHz
Mounting Type :
Surface Mount
Package / Case :
DO-214AB, SMC
Supplier Device Package :
DO-214AB (SMC)
Operating Temperature - Junction :
-55°C ~ 175°C
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