IRFD120PBF Pricing (USD) [90796pcs Stock]
- 1 pcs$0.44319
- 10 pcs$0.38632
- 100 pcs$0.28191
- 500 pcs$0.20882
- 1,000 pcs$0.16706
- Part Number:
- IRFD120PBF
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 100V 1.3A 4-DIP.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - RF, Diodes - Bridge Rectifiers, Thyristors - SCRs - Modules and Transistors - FETs, MOSFETs - Arrays ...
- Competitive Advantage:
- We specialize in Vishay Siliconix IRFD120PBF electronic components. IRFD120PBF can be shipped within 24 hours after order. If you have any demands for IRFD120PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFD120PBF Product Attributes
Part Number :
IRFD120PBF
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 100V 1.3A 4-DIP
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
270 mOhm @ 780mA, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
16nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
360pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
1.3W (Ta)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
4-DIP, Hexdip, HVMDIP
Package / Case :
4-DIP (0.300", 7.62mm)
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