Microsemi Corporation - APT65GP60B2G

KEY Part #: K6422600

APT65GP60B2G Pricing (USD) [4372pcs Stock]

  • 1 pcs$9.90999
  • 10 pcs$9.01072
  • 25 pcs$8.33514
  • 100 pcs$7.28565
  • 250 pcs$6.64278

Part Number:
APT65GP60B2G
Manufacturer:
Microsemi Corporation
Detailed description:
IGBT 600V 100A 833W TMAX.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - Special Purpose, Transistors - IGBTs - Arrays, Thyristors - SCRs - Modules, Diodes - Rectifiers - Arrays, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - RF and Diodes - Zener - Single ...
Competitive Advantage:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT65GP60B2G Product Attributes

Part Number : APT65GP60B2G
Manufacturer : Microsemi Corporation
Description : IGBT 600V 100A 833W TMAX
Series : POWER MOS 7®
Part Status : Not For New Designs
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 100A
Current - Collector Pulsed (Icm) : 250A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 65A
Power - Max : 833W
Switching Energy : 605µJ (on), 896µJ (off)
Input Type : Standard
Gate Charge : 210nC
Td (on/off) @ 25°C : 30ns/91ns
Test Condition : 400V, 65A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : -

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