Vishay Semiconductor Diodes Division - VS-3EGU06-M3/5BT

KEY Part #: K6427813

VS-3EGU06-M3/5BT Pricing (USD) [536122pcs Stock]

  • 1 pcs$0.06899
  • 3,200 pcs$0.06308

Part Number:
VS-3EGU06-M3/5BT
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 600V 3A SMB. Rectifiers 3 Amp 600 Volts Ultrafast - Low VF
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Diodes - Zener - Arrays, Transistors - IGBTs - Modules, Diodes - Rectifiers - Single, Thyristors - SCRs, Transistors - FETs, MOSFETs - RF, Transistors - JFETs and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division VS-3EGU06-M3/5BT electronic components. VS-3EGU06-M3/5BT can be shipped within 24 hours after order. If you have any demands for VS-3EGU06-M3/5BT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-3EGU06-M3/5BT Product Attributes

Part Number : VS-3EGU06-M3/5BT
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 600V 3A SMB
Series : FRED Pt®
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) : 3A
Voltage - Forward (Vf) (Max) @ If : 1.7V @ 3A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 25ns
Current - Reverse Leakage @ Vr : 3µA @ 600V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : DO-214AA, SMB
Supplier Device Package : SMB
Operating Temperature - Junction : -55°C ~ 175°C

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