Vishay Siliconix - SI4401DDY-T1-GE3

KEY Part #: K6415744

SI4401DDY-T1-GE3 Pricing (USD) [250794pcs Stock]

  • 1 pcs$0.14748
  • 2,500 pcs$0.13878

Part Number:
SI4401DDY-T1-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET P-CH 40V 16.1A 8-SOIC.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Bridge Rectifiers, Transistors - JFETs, Diodes - Zener - Single and Diodes - Rectifiers - Single ...
Competitive Advantage:
We specialize in Vishay Siliconix SI4401DDY-T1-GE3 electronic components. SI4401DDY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4401DDY-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI4401DDY-T1-GE3 Product Attributes

Part Number : SI4401DDY-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET P-CH 40V 16.1A 8-SOIC
Series : TrenchFET®
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 16.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 15 mOhm @ 10.2A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 95nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3007pF @ 20V
FET Feature : -
Power Dissipation (Max) : 2.5W (Ta), 6.3W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SO
Package / Case : 8-SOIC (0.154", 3.90mm Width)