FCP104N60F Pricing (USD) [17950pcs Stock]
- 1 pcs$2.29605
- 800 pcs$1.90913
- Part Number:
- FCP104N60F
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 600V TO-220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Modules, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Zener - Arrays, Thyristors - SCRs - Modules, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Diodes - Rectifiers - Arrays ...
- Competitive Advantage:
- We specialize in ON Semiconductor FCP104N60F electronic components. FCP104N60F can be shipped within 24 hours after order. If you have any demands for FCP104N60F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FCP104N60F Product Attributes
Part Number :
FCP104N60F
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 600V TO-220
Series :
HiPerFET™, Polar™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
104 mOhm @ 18.5A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
145nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
6130pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
357W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220-3
Package / Case :
TO-220-3
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