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  5. FCP104N60F

ON Semiconductor - FCP104N60F

KEY Part #: K6416740

FCP104N60F Pricing (USD) [17950pcs Stock]

  • 1 pcs$2.29605
  • 800 pcs$1.90913
Part Number:
FCP104N60F
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 600V TO-220.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Transistors - JFETs, Transistors - Bipolar (BJT) - Single, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Diodes - Zener - Single and Transistors - FETs, MOSFETs - Arrays ...
Competitive Advantage:
We specialize in ON Semiconductor FCP104N60F electronic components. FCP104N60F can be shipped within 24 hours after order. If you have any demands for FCP104N60F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FCP104N60F Product Attributes

Part Number : FCP104N60F
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 600V TO-220
Series : HiPerFET™, Polar™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 104 mOhm @ 18.5A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 145nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 6130pF @ 25V
FET Feature : -
Power Dissipation (Max) : 357W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220-3
Package / Case : TO-220-3

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