Toshiba Semiconductor and Storage - RN1417(TE85L,F)

KEY Part #: K6526877

RN1417(TE85L,F) Pricing (USD) [4561pcs Stock]

  • 3,000 pcs$0.02575

Part Number:
RN1417(TE85L,F)
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
TRANS PREBIAS NPN 0.2W S-MINI.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Rectifiers - Single, Transistors - IGBTs - Modules, Thyristors - TRIACs, Transistors - Special Purpose, Diodes - Rectifiers - Arrays and Diodes - Bridge Rectifiers ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage RN1417(TE85L,F) electronic components. RN1417(TE85L,F) can be shipped within 24 hours after order. If you have any demands for RN1417(TE85L,F), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RN1417(TE85L,F) Product Attributes

Part Number : RN1417(TE85L,F)
Manufacturer : Toshiba Semiconductor and Storage
Description : TRANS PREBIAS NPN 0.2W S-MINI
Series : -
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 250MHz
Power - Max : 200mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini

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