Vishay Semiconductor Diodes Division - ESH2D-E3/5BT

KEY Part #: K6449788

ESH2D-E3/5BT Pricing (USD) [550157pcs Stock]

  • 1 pcs$0.06723
  • 6,400 pcs$0.05751

Part Number:
ESH2D-E3/5BT
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 200V 2A DO214AA. Rectifiers 200 Volt 2.0A 25ns Glass Passivated
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Thyristors - SCRs - Modules, Diodes - Zener - Single, Transistors - IGBTs - Arrays, Power Driver Modules, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Arrays and Transistors - IGBTs - Single ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division ESH2D-E3/5BT electronic components. ESH2D-E3/5BT can be shipped within 24 hours after order. If you have any demands for ESH2D-E3/5BT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ESH2D-E3/5BT Product Attributes

Part Number : ESH2D-E3/5BT
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 200V 2A DO214AA
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 200V
Current - Average Rectified (Io) : 2A
Voltage - Forward (Vf) (Max) @ If : 930mV @ 2A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 35ns
Current - Reverse Leakage @ Vr : 2µA @ 200V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : DO-214AA, SMB
Supplier Device Package : DO-214AA (SMB)
Operating Temperature - Junction : -55°C ~ 175°C

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