STP80NF12 Pricing (USD) [24740pcs Stock]
- 1 pcs$1.42787
- 10 pcs$1.27362
- 100 pcs$0.99090
- 500 pcs$0.80238
- 1,000 pcs$0.67671
- Part Number:
- STP80NF12
- Manufacturer:
- STMicroelectronics
- Detailed description:
- MOSFET N-CH 120V 80A TO-220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Modules, Thyristors - DIACs, SIDACs and Diodes - RF ...
- Competitive Advantage:
- We specialize in STMicroelectronics STP80NF12 electronic components. STP80NF12 can be shipped within 24 hours after order. If you have any demands for STP80NF12, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STP80NF12 Product Attributes
Part Number :
STP80NF12
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 120V 80A TO-220
Series :
STripFET™ II
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
120V
Current - Continuous Drain (Id) @ 25°C :
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
18 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id :
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
189nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4300pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
300W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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