Vishay Semiconductor Diodes Division - VS-GB100TH120U

KEY Part #: K6533233

VS-GB100TH120U Pricing (USD) [261pcs Stock]

  • 1 pcs$177.68022
  • 12 pcs$163.71967

Part Number:
VS-GB100TH120U
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
IGBT 1200V 200A 1136W INT-A-PAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - Arrays, Thyristors - DIACs, SIDACs, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - IGBTs - Single ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division VS-GB100TH120U electronic components. VS-GB100TH120U can be shipped within 24 hours after order. If you have any demands for VS-GB100TH120U, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-GB100TH120U Product Attributes

Part Number : VS-GB100TH120U
Manufacturer : Vishay Semiconductor Diodes Division
Description : IGBT 1200V 200A 1136W INT-A-PAK
Series : -
Part Status : Active
IGBT Type : NPT
Configuration : Half Bridge
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 200A
Power - Max : 1136W
Vce(on) (Max) @ Vge, Ic : 3.6V @ 15V, 100A
Current - Collector Cutoff (Max) : 5mA
Input Capacitance (Cies) @ Vce : 8.45nF @ 20V
Input : Standard
NTC Thermistor : No
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : Double INT-A-PAK (3 + 4)
Supplier Device Package : Double INT-A-PAK

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