1SS427,L3M Pricing (USD) [2750629pcs Stock]
- 1 pcs$0.01419
- 10,000 pcs$0.01412
- 30,000 pcs$0.01329
- 50,000 pcs$0.01246
- 100,000 pcs$0.01107
- Part Number:
- 1SS427,L3M
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- DIODE GEN PURP 80V 100MA SOD923. Diodes - General Purpose, Power, Switching 300mA SW DIODE
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single, Power Driver Modules, Transistors - IGBTs - Single, Diodes - RF, Transistors - JFETs, Transistors - Bipolar (BJT) - Single, Pre-Biased and Diodes - Rectifiers - Single ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage 1SS427,L3M electronic components. 1SS427,L3M can be shipped within 24 hours after order. If you have any demands for 1SS427,L3M, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1SS427,L3M Product Attributes
Part Number :
1SS427,L3M
Manufacturer :
Toshiba Semiconductor and Storage
Description :
DIODE GEN PURP 80V 100MA SOD923
Series :
-
Part Status :
Active
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
80V
Current - Average Rectified (Io) :
100mA
Voltage - Forward (Vf) (Max) @ If :
1.2V @ 100mA
Speed :
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) :
1.6ns
Current - Reverse Leakage @ Vr :
500nA @ 80V
Capacitance @ Vr, F :
0.3pF @ 0V, 1MHz
Mounting Type :
Surface Mount
Package / Case :
SOD-923
Supplier Device Package :
SOD-923
Operating Temperature - Junction :
-55°C ~ 150°C
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