Part Number :
RN2107MFV,L3F
Manufacturer :
Toshiba Semiconductor and Storage
Description :
TRANS PREBIAS NPN
Transistor Type :
PNP - Pre-Biased
Current - Collector (Ic) (Max) :
100mA
Voltage - Collector Emitter Breakdown (Max) :
50V
Resistor - Base (R1) :
10 kOhms
Resistor - Emitter Base (R2) :
47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce :
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) :
500nA
Frequency - Transition :
-
Mounting Type :
Surface Mount
Supplier Device Package :
VESM