Vishay Semiconductor Diodes Division - BYS10-35HE3_A/H

KEY Part #: K6455118

BYS10-35HE3_A/H Pricing (USD) [931951pcs Stock]

  • 1 pcs$0.03969

Part Number:
BYS10-35HE3_A/H
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE SCHOTTKY 35V 1A DO214AC.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Diodes - Zener - Arrays, Diodes - Rectifiers - Single, Transistors - Special Purpose, Transistors - FETs, MOSFETs - Arrays, Thyristors - DIACs, SIDACs, Transistors - JFETs and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division BYS10-35HE3_A/H electronic components. BYS10-35HE3_A/H can be shipped within 24 hours after order. If you have any demands for BYS10-35HE3_A/H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYS10-35HE3_A/H Product Attributes

Part Number : BYS10-35HE3_A/H
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE SCHOTTKY 35V 1A DO214AC
Series : Automotive, AEC-Q100
Part Status : Active
Diode Type : Schottky
Voltage - DC Reverse (Vr) (Max) : 35V
Current - Average Rectified (Io) : 1.5A
Voltage - Forward (Vf) (Max) @ If : 500mV @ 1A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 500µA @ 35V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : DO-214AC, SMA
Supplier Device Package : SMA (DO-214AC)
Operating Temperature - Junction : -65°C ~ 150°C

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