IRF6810STRPBF Pricing (USD) [114334pcs Stock]
- 1 pcs$0.40859
- 4,800 pcs$0.40656
- Part Number:
- IRF6810STRPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N CH 25V 16A S1.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Transistors - Bipolar (BJT) - RF, Thyristors - SCRs - Modules, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - RF, Thyristors - DIACs, SIDACs, Diodes - Rectifiers - Arrays and Diodes - Rectifiers - Single ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRF6810STRPBF electronic components. IRF6810STRPBF can be shipped within 24 hours after order. If you have any demands for IRF6810STRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6810STRPBF Product Attributes
Part Number :
IRF6810STRPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N CH 25V 16A S1
Series :
HEXFET®
Part Status :
Not For New Designs
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
25V
Current - Continuous Drain (Id) @ 25°C :
16A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
5.2 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id :
2.1V @ 25µA
Gate Charge (Qg) (Max) @ Vgs :
11nC @ 4.5V
Vgs (Max) :
±16V
Input Capacitance (Ciss) (Max) @ Vds :
1038pF @ 13V
FET Feature :
-
Power Dissipation (Max) :
2.1W (Ta), 20W (Tc)
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
DIRECTFET S1
Package / Case :
DirectFET™ Isometric S1
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