Toshiba Semiconductor and Storage - SSM3K357R,LF

KEY Part #: K6404943

SSM3K357R,LF Pricing (USD) [871993pcs Stock]

  • 1 pcs$0.04242

Part Number:
SSM3K357R,LF
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
X34 SMALL LOW ON RESISTANCE MOSF.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Single, Transistors - IGBTs - Single, Thyristors - SCRs and Thyristors - SCRs - Modules ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage SSM3K357R,LF electronic components. SSM3K357R,LF can be shipped within 24 hours after order. If you have any demands for SSM3K357R,LF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SSM3K357R,LF Product Attributes

Part Number : SSM3K357R,LF
Manufacturer : Toshiba Semiconductor and Storage
Description : X34 SMALL LOW ON RESISTANCE MOSF
Series : π-MOSV
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 650mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 3V, 5V
Rds On (Max) @ Id, Vgs : 1.8 Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 1.5nC @ 5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 60pF @ 12V
FET Feature : -
Power Dissipation (Max) : 1W (Ta)
Operating Temperature : 150°C
Mounting Type : Surface Mount
Supplier Device Package : SOT-23F
Package / Case : SOT-23-3 Flat Leads

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