Vishay Semiconductor Diodes Division - ES2B-E3/5BT

KEY Part #: K6449795

ES2B-E3/5BT Pricing (USD) [602236pcs Stock]

  • 1 pcs$0.06142
  • 6,400 pcs$0.04834

Part Number:
ES2B-E3/5BT
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 100V 2A DO214AA. Rectifiers 2.0 Amp 100V 20ns
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - RF, Transistors - Special Purpose, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Arrays, Transistors - IGBTs - Single and Diodes - Bridge Rectifiers ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division ES2B-E3/5BT electronic components. ES2B-E3/5BT can be shipped within 24 hours after order. If you have any demands for ES2B-E3/5BT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ES2B-E3/5BT Product Attributes

Part Number : ES2B-E3/5BT
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 100V 2A DO214AA
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Current - Average Rectified (Io) : 2A
Voltage - Forward (Vf) (Max) @ If : 900mV @ 2A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 30ns
Current - Reverse Leakage @ Vr : 10µA @ 100V
Capacitance @ Vr, F : 18pF @ 4V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-214AA, SMB
Supplier Device Package : DO-214AA (SMB)
Operating Temperature - Junction : -55°C ~ 150°C

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