EPC - EPC8002

KEY Part #: K6418444

EPC8002 Pricing (USD) [65490pcs Stock]

  • 1 pcs$0.62703
  • 2,500 pcs$0.62391

Part Number:
EPC8002
Manufacturer:
EPC
Detailed description:
GANFET TRANS 65V 2.7A BUMPED DIE.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Power Driver Modules, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - SCRs, Transistors - FETs, MOSFETs - Single and Transistors - Bipolar (BJT) - RF ...
Competitive Advantage:
We specialize in EPC EPC8002 electronic components. EPC8002 can be shipped within 24 hours after order. If you have any demands for EPC8002, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EPC8002 Product Attributes

Part Number : EPC8002
Manufacturer : EPC
Description : GANFET TRANS 65V 2.7A BUMPED DIE
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 65V
Current - Continuous Drain (Id) @ 25°C : 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 530 mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 21pF @ 32.5V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
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