Vishay Semiconductor Diodes Division - VS-4ESH02-M3/87A

KEY Part #: K6430847

VS-4ESH02-M3/87A Pricing (USD) [492735pcs Stock]

  • 1 pcs$0.07922
  • 6,500 pcs$0.07882

Part Number:
VS-4ESH02-M3/87A
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 200V 4A TO277A. Rectifiers Hypfst Rct 4A 200V
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Diodes - Rectifiers - Arrays, Diodes - Zener - Single, Transistors - Special Purpose, Diodes - RF, Thyristors - SCRs, Transistors - FETs, MOSFETs - Arrays and Transistors - Bipolar (BJT) - Arrays ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division VS-4ESH02-M3/87A electronic components. VS-4ESH02-M3/87A can be shipped within 24 hours after order. If you have any demands for VS-4ESH02-M3/87A, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-4ESH02-M3/87A Product Attributes

Part Number : VS-4ESH02-M3/87A
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 200V 4A TO277A
Series : FRED Pt®
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 200V
Current - Average Rectified (Io) : 4A
Voltage - Forward (Vf) (Max) @ If : 930mV @ 4A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 25ns
Current - Reverse Leakage @ Vr : 2µA @ 200V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : TO-277, 3-PowerDFN
Supplier Device Package : TO-277A (SMPC)
Operating Temperature - Junction : -65°C ~ 175°C

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