IRF3808STRLPBF Pricing (USD) [49346pcs Stock]
- 1 pcs$0.79238
- 800 pcs$0.65450
- Part Number:
- IRF3808STRLPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 75V 106A D2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single, Thyristors - SCRs, Thyristors - DIACs, SIDACs, Diodes - Rectifiers - Arrays and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRF3808STRLPBF electronic components. IRF3808STRLPBF can be shipped within 24 hours after order. If you have any demands for IRF3808STRLPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF3808STRLPBF Product Attributes
Part Number :
IRF3808STRLPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 75V 106A D2PAK
Series :
HEXFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
75V
Current - Continuous Drain (Id) @ 25°C :
106A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
7 mOhm @ 82A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
220nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
5310pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
200W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D2PAK
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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