Global Power Technologies Group - GP1M018A020HG

KEY Part #: K6402598

[2648pcs Stock]


    Part Number:
    GP1M018A020HG
    Manufacturer:
    Global Power Technologies Group
    Detailed description:
    MOSFET N-CH 200V 18A TO220.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Thyristors - TRIACs, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Single, Diodes - Rectifiers - Single, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - FETs, MOSFETs - RF ...
    Competitive Advantage:
    We specialize in Global Power Technologies Group GP1M018A020HG electronic components. GP1M018A020HG can be shipped within 24 hours after order. If you have any demands for GP1M018A020HG, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    GP1M018A020HG Product Attributes

    Part Number : GP1M018A020HG
    Manufacturer : Global Power Technologies Group
    Description : MOSFET N-CH 200V 18A TO220
    Series : -
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 200V
    Current - Continuous Drain (Id) @ 25°C : 18A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 170 mOhm @ 9A, 10V
    Vgs(th) (Max) @ Id : 5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 18nC @ 10V
    Vgs (Max) : ±30V
    Input Capacitance (Ciss) (Max) @ Vds : 950pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 94W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : TO-220
    Package / Case : TO-220-3

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