Infineon Technologies - AUIRFZ48N

KEY Part #: K6419000

AUIRFZ48N Pricing (USD) [86762pcs Stock]

  • 1 pcs$0.45067
  • 1,000 pcs$0.41346

Part Number:
AUIRFZ48N
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N CH 55V 69A TO-220AB.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Thyristors - TRIACs, Transistors - Special Purpose, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - JFETs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Thyristors - DIACs, SIDACs ...
Competitive Advantage:
We specialize in Infineon Technologies AUIRFZ48N electronic components. AUIRFZ48N can be shipped within 24 hours after order. If you have any demands for AUIRFZ48N, Please submit a Request for Quotation here or send us an email:
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AUIRFZ48N Product Attributes

Part Number : AUIRFZ48N
Manufacturer : Infineon Technologies
Description : MOSFET N CH 55V 69A TO-220AB
Series : HEXFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 55V
Current - Continuous Drain (Id) @ 25°C : 69A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 14 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id : 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 63nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1900pF @ 25V
FET Feature : -
Power Dissipation (Max) : 160W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220AB
Package / Case : TO-220-3