TK11P65W,RQ Pricing (USD) [113607pcs Stock]
- 1 pcs$0.34707
- 2,000 pcs$0.34534
- Part Number:
- TK11P65W,RQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 650V 11.1A DPAK-0S.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Thyristors - DIACs, SIDACs, Thyristors - SCRs, Transistors - IGBTs - Single, Diodes - RF, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Arrays and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TK11P65W,RQ electronic components. TK11P65W,RQ can be shipped within 24 hours after order. If you have any demands for TK11P65W,RQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK11P65W,RQ Product Attributes
Part Number :
TK11P65W,RQ
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 650V 11.1A DPAK-0S
Series :
DTMOSIV
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
11.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
440 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 450µA
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
890pF @ 300V
FET Feature :
-
Power Dissipation (Max) :
100W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
DPAK
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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