Diodes Incorporated - DMN3012LDG-13

KEY Part #: K6522503

DMN3012LDG-13 Pricing (USD) [126375pcs Stock]

  • 1 pcs$0.29268

Part Number:
DMN3012LDG-13
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET BVDSS 25V-30V POWERDI333.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - SCRs, Transistors - FETs, MOSFETs - Single, Thyristors - SCRs - Modules and Transistors - Bipolar (BJT) - Arrays ...
Competitive Advantage:
We specialize in Diodes Incorporated DMN3012LDG-13 electronic components. DMN3012LDG-13 can be shipped within 24 hours after order. If you have any demands for DMN3012LDG-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN3012LDG-13 Product Attributes

Part Number : DMN3012LDG-13
Manufacturer : Diodes Incorporated
Description : MOSFET BVDSS 25V-30V POWERDI333
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 10A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs : 12 mOhm @ 15A, 5V, 6 mOhm @ 15A, 5V
Vgs(th) (Max) @ Id : 2.1V @ 250µA, 1.15V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 6.1nC @ 4.5V, 12.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 850pF @ 15V, 1480pF @ 15V
Power - Max : 2.2W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-PowerLDFN
Supplier Device Package : PowerDI3333-8