Part Number :
IPD50R1K4CEAUMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 500V 3.1A PG-TO-252
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
500V
Current - Continuous Drain (Id) @ 25°C :
3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
13V
Rds On (Max) @ Id, Vgs :
1.4 Ohm @ 900mA, 13V
Vgs(th) (Max) @ Id :
3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs :
8.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
178pF @ 100V
Power Dissipation (Max) :
42W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PG-TO252-3
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63