RQ6E085BNTCR Pricing (USD) [280423pcs Stock]
- 1 pcs$0.13190
- 3,000 pcs$0.11128
- Part Number:
- RQ6E085BNTCR
- Manufacturer:
- Rohm Semiconductor
- Detailed description:
- NCH 30V 8.5A MIDDLE POWER MOSFET.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Diodes - RF, Transistors - IGBTs - Arrays, Transistors - IGBTs - Modules, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Single and Power Driver Modules ...
- Competitive Advantage:
- We specialize in Rohm Semiconductor RQ6E085BNTCR electronic components. RQ6E085BNTCR can be shipped within 24 hours after order. If you have any demands for RQ6E085BNTCR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RQ6E085BNTCR Product Attributes
Part Number :
RQ6E085BNTCR
Manufacturer :
Rohm Semiconductor
Description :
NCH 30V 8.5A MIDDLE POWER MOSFET
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
14.4 mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
32.7nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1350pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
1.25W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-457
Package / Case :
SC-74, SOT-457
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