IXFR120N20 Pricing (USD) [5628pcs Stock]
- 1 pcs$8.89560
- 30 pcs$8.85135
- Part Number:
- IXFR120N20
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 200V 105A ISOPLUS247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Single and Transistors - Bipolar (BJT) - Single ...
- Competitive Advantage:
- We specialize in IXYS IXFR120N20 electronic components. IXFR120N20 can be shipped within 24 hours after order. If you have any demands for IXFR120N20, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFR120N20 Product Attributes
Part Number :
IXFR120N20
Manufacturer :
IXYS
Description :
MOSFET N-CH 200V 105A ISOPLUS247
Series :
HiPerFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
200V
Current - Continuous Drain (Id) @ 25°C :
105A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
17 mOhm @ 60A, 10V
Vgs(th) (Max) @ Id :
4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs :
360nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
9100pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
417W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
ISOPLUS247™
Package / Case :
ISOPLUS247™
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