Description :
MOSFET 4N-CH 100V 10A 12SIP
FET Feature :
Logic Level Gate
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
10A
Rds On (Max) @ Id, Vgs :
80 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id :
2V @ 250mA
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
1630pF @ 10V
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
12-SIP w/fin