Infineon Technologies - IPB80N06S405ATMA2

KEY Part #: K6419599

IPB80N06S405ATMA2 Pricing (USD) [120670pcs Stock]

  • 1 pcs$0.30652
  • 1,000 pcs$0.28120

Part Number:
IPB80N06S405ATMA2
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 60V 80A TO263-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Single, Diodes - Rectifiers - Arrays, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors) and Diodes - Rectifiers - Single ...
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB80N06S405ATMA2 Product Attributes

Part Number : IPB80N06S405ATMA2
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 60V 80A TO263-3
Series : Automotive, AEC-Q101, OptiMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 5.7 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id : 4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs : 81nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 6500pF @ 25V
FET Feature : -
Power Dissipation (Max) : 107W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PG-TO263-3-2
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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