Vishay Siliconix - SIHA20N50E-E3

KEY Part #: K6396581

SIHA20N50E-E3 Pricing (USD) [28864pcs Stock]

  • 1 pcs$1.42787
  • 10 pcs$1.28949
  • 100 pcs$0.98308
  • 500 pcs$0.76460
  • 1,000 pcs$0.63353

Part Number:
SIHA20N50E-E3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 500V 19A TO-220FP.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Modules, Transistors - Programmable Unijunction and Transistors - FETs, MOSFETs - RF ...
Competitive Advantage:
We specialize in Vishay Siliconix SIHA20N50E-E3 electronic components. SIHA20N50E-E3 can be shipped within 24 hours after order. If you have any demands for SIHA20N50E-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHA20N50E-E3 Product Attributes

Part Number : SIHA20N50E-E3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 500V 19A TO-220FP
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 184 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 92nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1640pF @ 100V
FET Feature : -
Power Dissipation (Max) : 34W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220 Full Pack
Package / Case : TO-220-3 Full Pack

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