ON Semiconductor - BAS19LT1G

KEY Part #: K6425890

BAS19LT1G Pricing (USD) [4557573pcs Stock]

  • 1 pcs$0.00812
  • 3,000 pcs$0.00783
  • 6,000 pcs$0.00707
  • 15,000 pcs$0.00615
  • 30,000 pcs$0.00553
  • 75,000 pcs$0.00492
  • 150,000 pcs$0.00410

Part Number:
BAS19LT1G
Manufacturer:
ON Semiconductor
Detailed description:
DIODE GEN PURP 120V 200MA SOT23. Diodes - General Purpose, Power, Switching 120V 200mA
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Arrays, Transistors - Programmable Unijunction, Thyristors - SCRs, Diodes - Zener - Arrays, Diodes - RF, Transistors - Bipolar (BJT) - RF and Power Driver Modules ...
Competitive Advantage:
We specialize in ON Semiconductor BAS19LT1G electronic components. BAS19LT1G can be shipped within 24 hours after order. If you have any demands for BAS19LT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAS19LT1G Product Attributes

Part Number : BAS19LT1G
Manufacturer : ON Semiconductor
Description : DIODE GEN PURP 120V 200MA SOT23
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 120V
Current - Average Rectified (Io) : 200mA (DC)
Voltage - Forward (Vf) (Max) @ If : 1.25V @ 200mA
Speed : Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) : 50ns
Current - Reverse Leakage @ Vr : 100nA @ 100V
Capacitance @ Vr, F : 5pF @ 0V, 1MHz
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : SOT-23-3 (TO-236)
Operating Temperature - Junction : -55°C ~ 150°C

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