STMicroelectronics - STD10N60M2

KEY Part #: K6419448

STD10N60M2 Pricing (USD) [112621pcs Stock]

  • 1 pcs$0.32842
  • 2,500 pcs$0.29235

Part Number:
STD10N60M2
Manufacturer:
STMicroelectronics
Detailed description:
MOSFET N-CH 600V DPAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Diodes - Variable Capacitance (Varicaps, Varactors), Power Driver Modules, Transistors - IGBTs - Arrays, Transistors - JFETs, Diodes - Zener - Single, Diodes - Bridge Rectifiers and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
Competitive Advantage:
We specialize in STMicroelectronics STD10N60M2 electronic components. STD10N60M2 can be shipped within 24 hours after order. If you have any demands for STD10N60M2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STD10N60M2 Product Attributes

Part Number : STD10N60M2
Manufacturer : STMicroelectronics
Description : MOSFET N-CH 600V DPAK
Series : MDmesh™ II Plus
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 600 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 13.5nC @ 10V
Vgs (Max) : ±25V
Input Capacitance (Ciss) (Max) @ Vds : 400pF @ 100V
FET Feature : -
Power Dissipation (Max) : 85W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : DPAK
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

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