IXTP2R4N120P Pricing (USD) [23090pcs Stock]
- 1 pcs$2.06287
- 50 pcs$2.05260
- Part Number:
- IXTP2R4N120P
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 1200V 2.4A TO-220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Diodes - Zener - Single, Thyristors - SCRs - Modules, Thyristors - DIACs, SIDACs, Diodes - RF, Thyristors - TRIACs, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in IXYS IXTP2R4N120P electronic components. IXTP2R4N120P can be shipped within 24 hours after order. If you have any demands for IXTP2R4N120P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTP2R4N120P Product Attributes
Part Number :
IXTP2R4N120P
Manufacturer :
IXYS
Description :
MOSFET N-CH 1200V 2.4A TO-220
Series :
Polar™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1200V
Current - Continuous Drain (Id) @ 25°C :
2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
7.5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id :
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
37nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1207pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
125W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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