Vishay Semiconductor Diodes Division - VS-GB600AH120N

KEY Part #: K6533208

VS-GB600AH120N Pricing (USD) [359pcs Stock]

  • 1 pcs$129.08969
  • 12 pcs$105.88785

Part Number:
VS-GB600AH120N
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
IGBT 1200V 910A 3125W INT-A-PAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - RF, Thyristors - TRIACs, Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Diodes - RF, Transistors - IGBTs - Modules and Thyristors - SCRs - Modules ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division VS-GB600AH120N electronic components. VS-GB600AH120N can be shipped within 24 hours after order. If you have any demands for VS-GB600AH120N, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-GB600AH120N Product Attributes

Part Number : VS-GB600AH120N
Manufacturer : Vishay Semiconductor Diodes Division
Description : IGBT 1200V 910A 3125W INT-A-PAK
Series : -
Part Status : Active
IGBT Type : -
Configuration : Single
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 910A
Power - Max : 3125W
Vce(on) (Max) @ Vge, Ic : 1.9V @ 15V, 600A (Typ)
Current - Collector Cutoff (Max) : 5mA
Input Capacitance (Cies) @ Vce : 41nF @ 25V
Input : Standard
NTC Thermistor : No
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : Double INT-A-PAK (5)
Supplier Device Package : Double INT-A-PAK

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