Vishay Semiconductor Diodes Division - MSE1PBHM3/89A

KEY Part #: K6453393

MSE1PBHM3/89A Pricing (USD) [1270843pcs Stock]

  • 1 pcs$0.02910
  • 9,000 pcs$0.02467

Part Number:
MSE1PBHM3/89A
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 100V 1A MICROSMP. Rectifiers 1.0 Amp 100 Volt 20 Amp IFSM
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Single, Thyristors - DIACs, SIDACs, Diodes - Bridge Rectifiers and Thyristors - SCRs - Modules ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division MSE1PBHM3/89A electronic components. MSE1PBHM3/89A can be shipped within 24 hours after order. If you have any demands for MSE1PBHM3/89A, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MSE1PBHM3/89A Product Attributes

Part Number : MSE1PBHM3/89A
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 100V 1A MICROSMP
Series : eSMP®
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Current - Average Rectified (Io) : 1A
Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 780ns
Current - Reverse Leakage @ Vr : 1µA @ 100V
Capacitance @ Vr, F : 5pF @ 4V, 1MHz
Mounting Type : Surface Mount
Package / Case : MicroSMP
Supplier Device Package : MicroSMP (DO-219AD)
Operating Temperature - Junction : -55°C ~ 175°C

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