Infineon Technologies - IPI120N08S403AKSA1

KEY Part #: K6417481

IPI120N08S403AKSA1 Pricing (USD) [32194pcs Stock]

  • 1 pcs$1.28015
  • 500 pcs$0.94149

Part Number:
IPI120N08S403AKSA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH TO262-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - IGBTs - Modules, Transistors - JFETs, Transistors - Bipolar (BJT) - Arrays, Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Arrays and Diodes - Bridge Rectifiers ...
Competitive Advantage:
We specialize in Infineon Technologies IPI120N08S403AKSA1 electronic components. IPI120N08S403AKSA1 can be shipped within 24 hours after order. If you have any demands for IPI120N08S403AKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPI120N08S403AKSA1 Product Attributes

Part Number : IPI120N08S403AKSA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH TO262-3
Series : Automotive, AEC-Q101, OptiMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2.8 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id : 4V @ 223µA
Gate Charge (Qg) (Max) @ Vgs : 167nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 11550pF @ 25V
FET Feature : -
Power Dissipation (Max) : 278W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : PG-TO262-3-1
Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA

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