SSM6H19NU,LF Pricing (USD) [929174pcs Stock]
- 1 pcs$0.04401
- 3,000 pcs$0.04379
- Part Number:
- SSM6H19NU,LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 40V 2A 6UDFN.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - Programmable Unijunction, Transistors - Special Purpose, Transistors - FETs, MOSFETs - Arrays, Thyristors - DIACs, SIDACs and Power Driver Modules ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage SSM6H19NU,LF electronic components. SSM6H19NU,LF can be shipped within 24 hours after order. If you have any demands for SSM6H19NU,LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM6H19NU,LF Product Attributes
Part Number :
SSM6H19NU,LF
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 40V 2A 6UDFN
Series :
U-MOSVII-H
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
40V
Current - Continuous Drain (Id) @ 25°C :
2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 8V
Rds On (Max) @ Id, Vgs :
185 mOhm @ 1A, 8V
Vgs(th) (Max) @ Id :
1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
2.2nC @ 4.2V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
130pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
1W (Ta)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
6-UDFN (2x2)
Package / Case :
6-UDFN Exposed Pad
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