Vishay Semiconductor Diodes Division - S1GHE3_A/H

KEY Part #: K6453075

S1GHE3_A/H Pricing (USD) [977949pcs Stock]

  • 1 pcs$0.03782
  • 7,200 pcs$0.02825

Part Number:
S1GHE3_A/H
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 400V 1A DO214AC. Rectifiers 1.0 Amp 400 Volt 40A IFSM @ 8.3ms
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs, Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - RF, Diodes - Bridge Rectifiers and Transistors - Bipolar (BJT) - Single ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division S1GHE3_A/H electronic components. S1GHE3_A/H can be shipped within 24 hours after order. If you have any demands for S1GHE3_A/H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

S1GHE3_A/H Product Attributes

Part Number : S1GHE3_A/H
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 400V 1A DO214AC
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 400V
Current - Average Rectified (Io) : 1A
Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 1.8µs
Current - Reverse Leakage @ Vr : 1µA @ 400V
Capacitance @ Vr, F : 12pF @ 4V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-214AC, SMA
Supplier Device Package : DO-214AC (SMA)
Operating Temperature - Junction : -55°C ~ 150°C

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