Vishay Semiconductor Diodes Division - 1N4448TAP

KEY Part #: K6455256

1N4448TAP Pricing (USD) [4676071pcs Stock]

  • 1 pcs$0.00835
  • 10,000 pcs$0.00831
  • 30,000 pcs$0.00747
  • 50,000 pcs$0.00664
  • 100,000 pcs$0.00623
  • 250,000 pcs$0.00554

Part Number:
1N4448TAP
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 75V 150MA DO35. Diodes - General Purpose, Power, Switching Vr/75V Io/150mA
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays, Thyristors - SCRs, Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased and Diodes - RF ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division 1N4448TAP electronic components. 1N4448TAP can be shipped within 24 hours after order. If you have any demands for 1N4448TAP, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N4448TAP Product Attributes

Part Number : 1N4448TAP
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 75V 150MA DO35
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 75V
Current - Average Rectified (Io) : 150mA
Voltage - Forward (Vf) (Max) @ If : 720mV @ 5mA
Speed : Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) : 8ns
Current - Reverse Leakage @ Vr : 5µA @ 75V
Capacitance @ Vr, F : 4pF @ 0V, 1MHz
Mounting Type : Through Hole
Package / Case : DO-204AH, DO-35, Axial
Supplier Device Package : DO-35
Operating Temperature - Junction : 175°C (Max)

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