IXFB30N120P Pricing (USD) [3146pcs Stock]
- 1 pcs$15.91179
- 25 pcs$15.83263
- Part Number:
- IXFB30N120P
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 1200V 30A PLUS264.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Diodes - RF, Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - Single, Transistors - JFETs, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Single and Thyristors - SCRs ...
- Competitive Advantage:
- We specialize in IXYS IXFB30N120P electronic components. IXFB30N120P can be shipped within 24 hours after order. If you have any demands for IXFB30N120P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFB30N120P Product Attributes
Part Number :
IXFB30N120P
Manufacturer :
IXYS
Description :
MOSFET N-CH 1200V 30A PLUS264
Series :
HiPerFET™, PolarP2™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1200V
Current - Continuous Drain (Id) @ 25°C :
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
350 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id :
6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
310nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
22500pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
1250W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PLUS264™
Package / Case :
TO-264-3, TO-264AA
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