Toshiba Semiconductor and Storage - TK16A60W,S4X

KEY Part #: K6417722

TK16A60W,S4X Pricing (USD) [39294pcs Stock]

  • 1 pcs$1.04506
  • 2,500 pcs$1.03986

Part Number:
TK16A60W,S4X
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET N CH 600V 15.8ADTMOSIV.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - TRIACs, Thyristors - SCRs, Transistors - IGBTs - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - Special Purpose ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage TK16A60W,S4X electronic components. TK16A60W,S4X can be shipped within 24 hours after order. If you have any demands for TK16A60W,S4X, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK16A60W,S4X Product Attributes

Part Number : TK16A60W,S4X
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N CH 600V 15.8ADTMOSIV
Series : DTMOSIV
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 15.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 190 mOhm @ 7.9A, 10V
Vgs(th) (Max) @ Id : 3.7V @ 790µA
Gate Charge (Qg) (Max) @ Vgs : 40nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1350pF @ 300V
FET Feature : -
Power Dissipation (Max) : 40W (Tc)
Operating Temperature : -
Mounting Type : Through Hole
Supplier Device Package : TO-220
Package / Case : TO-220-3 Full Pack

You May Also Be Interested In