Infineon Technologies - IPD033N06NATMA1

KEY Part #: K6419433

IPD033N06NATMA1 Pricing (USD) [111859pcs Stock]

  • 1 pcs$0.33066
  • 2,500 pcs$0.30335

Part Number:
IPD033N06NATMA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 60V 90A TO252-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Single, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - Bipolar (BJT) - Arrays ...
Competitive Advantage:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPD033N06NATMA1 Product Attributes

Part Number : IPD033N06NATMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 60V 90A TO252-3
Series : OptiMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 3.3 mOhm @ 90A, 10V
Vgs(th) (Max) @ Id : 3.3V @ 50µA
Gate Charge (Qg) (Max) @ Vgs : 44nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3400pF @ 30V
FET Feature : -
Power Dissipation (Max) : 107W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PG-TO252-3
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

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