Toshiba Semiconductor and Storage - TPCC8093,L1Q

KEY Part #: K6421314

TPCC8093,L1Q Pricing (USD) [439480pcs Stock]

  • 1 pcs$0.08416

Part Number:
TPCC8093,L1Q
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
X35 PB-F POWER MOSFET TRANSISTOR.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - RF and Transistors - Special Purpose ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage TPCC8093,L1Q electronic components. TPCC8093,L1Q can be shipped within 24 hours after order. If you have any demands for TPCC8093,L1Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPCC8093,L1Q Product Attributes

Part Number : TPCC8093,L1Q
Manufacturer : Toshiba Semiconductor and Storage
Description : X35 PB-F POWER MOSFET TRANSISTOR
Series : U-MOSVII
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 21A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 5.8 mOhm @ 10.5A, 4.5V
Vgs(th) (Max) @ Id : 1.2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs : 16nC @ 5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 1860pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.9W (Ta), 30W (Tc)
Operating Temperature : 150°C
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN

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