IRF7606TRPBF Pricing (USD) [355350pcs Stock]
- 1 pcs$0.10409
- 4,000 pcs$0.09992
- Part Number:
- IRF7606TRPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET P-CH 30V 3.6A MICRO8.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - RF, Thyristors - SCRs, Diodes - Rectifiers - Single and Transistors - IGBTs - Arrays ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRF7606TRPBF electronic components. IRF7606TRPBF can be shipped within 24 hours after order. If you have any demands for IRF7606TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7606TRPBF Product Attributes
Part Number :
IRF7606TRPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET P-CH 30V 3.6A MICRO8
Series :
HEXFET®
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
90 mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
520pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
1.8W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
Micro8™
Package / Case :
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
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