Toshiba Semiconductor and Storage - RN1911FETE85LF

KEY Part #: K6529587

RN1911FETE85LF Pricing (USD) [2408483pcs Stock]

  • 1 pcs$0.01543
  • 4,000 pcs$0.01536

Part Number:
RN1911FETE85LF
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
TRANS 2NPN PREBIAS 0.1W ES6.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Diodes - Rectifiers - Arrays, Transistors - Programmable Unijunction, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased and Diodes - RF ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage RN1911FETE85LF electronic components. RN1911FETE85LF can be shipped within 24 hours after order. If you have any demands for RN1911FETE85LF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RN1911FETE85LF Product Attributes

Part Number : RN1911FETE85LF
Manufacturer : Toshiba Semiconductor and Storage
Description : TRANS 2NPN PREBIAS 0.1W ES6
Series : -
Part Status : Active
Transistor Type : 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : 250MHz
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SOT-563, SOT-666
Supplier Device Package : ES6

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