IXFN80N50Q3 Pricing (USD) [2401pcs Stock]
- 1 pcs$20.74657
- 10 pcs$19.19081
- 100 pcs$16.39016
- Part Number:
- IXFN80N50Q3
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 500V 63A SOT-227.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - RF, Thyristors - SCRs, Diodes - Rectifiers - Arrays, Transistors - JFETs, Transistors - Bipolar (BJT) - Single and Transistors - IGBTs - Arrays ...
- Competitive Advantage:
- We specialize in IXYS IXFN80N50Q3 electronic components. IXFN80N50Q3 can be shipped within 24 hours after order. If you have any demands for IXFN80N50Q3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFN80N50Q3 Product Attributes
Part Number :
IXFN80N50Q3
Manufacturer :
IXYS
Description :
MOSFET N-CH 500V 63A SOT-227
Series :
HiPerFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
500V
Current - Continuous Drain (Id) @ 25°C :
63A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
65 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id :
6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs :
200nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
10000pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
780W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Chassis Mount
Supplier Device Package :
SOT-227B
Package / Case :
SOT-227-4, miniBLOC
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