Vishay Semiconductor Diodes Division - 1N6482HE3/96

KEY Part #: K6457745

1N6482HE3/96 Pricing (USD) [665064pcs Stock]

  • 1 pcs$0.05562
  • 6,000 pcs$0.05085

Part Number:
1N6482HE3/96
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 600V 1A DO213AB. Rectifiers 600 Volt 1.0 Amp 30 Amp IFSM
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single, Transistors - Special Purpose, Transistors - Bipolar (BJT) - RF, Diodes - Bridge Rectifiers, Thyristors - DIACs, SIDACs and Thyristors - TRIACs ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division 1N6482HE3/96 electronic components. 1N6482HE3/96 can be shipped within 24 hours after order. If you have any demands for 1N6482HE3/96, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N6482HE3/96 Product Attributes

Part Number : 1N6482HE3/96
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 600V 1A DO213AB
Series : SUPERECTIFIER®
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) : 1A
Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 10µA @ 600V
Capacitance @ Vr, F : 8pF @ 4V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-213AB, MELF (Glass)
Supplier Device Package : DO-213AB
Operating Temperature - Junction : -65°C ~ 175°C

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