NVTR01P02LT1G Pricing (USD) [792956pcs Stock]
- 1 pcs$0.04665
- 3,000 pcs$0.04479
- Part Number:
- NVTR01P02LT1G
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET P-CH 20V 1.3A SOT23.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Diodes - Zener - Single, Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Diodes - Bridge Rectifiers, Thyristors - SCRs, Transistors - Programmable Unijunction and Thyristors - DIACs, SIDACs ...
- Competitive Advantage:
- We specialize in ON Semiconductor NVTR01P02LT1G electronic components. NVTR01P02LT1G can be shipped within 24 hours after order. If you have any demands for NVTR01P02LT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NVTR01P02LT1G Product Attributes
Part Number :
NVTR01P02LT1G
Manufacturer :
ON Semiconductor
Description :
MOSFET P-CH 20V 1.3A SOT23
Series :
-
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
220 mOhm @ 750mA, 4.5V
Vgs(th) (Max) @ Id :
1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
3.1nC @ 4V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
225pF @ 5V
FET Feature :
-
Power Dissipation (Max) :
400mW (Ta)
Operating Temperature :
-
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-23-3
Package / Case :
TO-236-3, SC-59, SOT-23-3
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