[2636pcs Stock]
- Part Number:
- GP1M003A090PH
- Manufacturer:
- Global Power Technologies Group
- Detailed description:
- MOSFET N-CH 900V 2.5A IPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - RF, Power Driver Modules, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Arrays and Transistors - FETs, MOSFETs - Arrays ...
- Competitive Advantage:
- We specialize in Global Power Technologies Group GP1M003A090PH electronic components. GP1M003A090PH can be shipped within 24 hours after order. If you have any demands for GP1M003A090PH, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GP1M003A090PH Product Attributes
Part Number :
GP1M003A090PH
Manufacturer :
Global Power Technologies Group
Description :
MOSFET N-CH 900V 2.5A IPAK
Series :
-
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
900V
Current - Continuous Drain (Id) @ 25°C :
2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
5.1 Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
748pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
94W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
I-PAK
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
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