IRF200P222 Pricing (USD) [5393pcs Stock]
- 1 pcs$7.64174
- 400 pcs$4.79194
- Part Number:
- IRF200P222
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 200V 182A TO247AC.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Arrays, Diodes - Zener - Arrays, Diodes - Zener - Single, Thyristors - DIACs, SIDACs, Diodes - Bridge Rectifiers, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRF200P222 electronic components. IRF200P222 can be shipped within 24 hours after order. If you have any demands for IRF200P222, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF200P222 Product Attributes
Part Number :
IRF200P222
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 200V 182A TO247AC
Series :
StrongIRFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
200V
Current - Continuous Drain (Id) @ 25°C :
182A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
6.6 mOhm @ 82A, 10V
Vgs(th) (Max) @ Id :
4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs :
203nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
9820pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
556W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247AC
Package / Case :
TO-247-3
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