IPB80N06S209ATMA2 Pricing (USD) [110838pcs Stock]
- 1 pcs$0.33371
- 1,000 pcs$0.31781
- Part Number:
- IPB80N06S209ATMA2
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 55V 80A TO263-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCRs, Diodes - Bridge Rectifiers, Power Driver Modules, Transistors - Programmable Unijunction and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPB80N06S209ATMA2 electronic components. IPB80N06S209ATMA2 can be shipped within 24 hours after order. If you have any demands for IPB80N06S209ATMA2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB80N06S209ATMA2 Product Attributes
Part Number :
IPB80N06S209ATMA2
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 55V 80A TO263-3
Series :
OptiMOS™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
55V
Current - Continuous Drain (Id) @ 25°C :
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
8.8 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id :
4V @ 125µA
Gate Charge (Qg) (Max) @ Vgs :
80nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2360pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
190W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PG-TO263-3-2
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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